Surface passivation of HgCdTe by CdZnTe and its characteristics

In this paper, we report the results of capacitance-voltage measurements conducted on several metal-insulator semiconductor (MIS) capacitors in which HgCdTe surfaces are treated with various surface etching and oxidation processes. CdZnTe passivation layers were deposited on HgCdTe surfaces by thermal evaporation after the surfaces were etched with 0.5-2.0% bromine in methanal solution, or thin oxide layers (t(ox) similar to few ten Angstrom) were grown on the surfaces, in order to investigate effects of the surface treatments on the electrical properties of the surfaces, as determined from capacitance-voltage (C-V) measurements at, 80K and 1 MHz. A negative flat band voltage has been observed for MIS capacitors fabricated after etching of HgCdTe surfaces with bromine in methanol solutions, which is reported to make the surface Te-rich. It is inferred that residual Te on the surface is a positive charge, Te4+. C-V characteristics for MIS capacitors fabricated on oxide surfaces grown by air-exposure and electrolytic process have shows large hysteresis effects, from which it is inferred that imperfect and electrically active oxide compounds and HgTe particles near the surface become slow interface states.