Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

被引：125

作者：

Koirala, Nikesh ^{[1
]}

Brahlek, Matthew ^{[1
]}

Salehi, Maryam ^{[2
]}

Wu, Liang ^{[3
]}

Dai, Jixia ^{[1
]}

Waugh, Justin ^{[4
]}

Nummy, Thomas ^{[4
]}

Han, Myung-Geun ^{[5
]}

Moon, Jisoo ^{[1
]}

Zhu, Yimei ^{[5
]}

Dessau, Daniel ^{[4
]}

Wu, Weida ^{[1
]}

Armitage, N. Peter ^{[3
]}

Oh, Seongshik ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USA

[3] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA

[4] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

[5] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci, Upton, NY 11973 USA

来源：

NANO LETTERS | 2015年 / 15卷 / 12期

基金：

美国国家科学基金会;

关键词：

Topological insulator; molecular beam epitaxy; heterostructure; thin films; quantum Hall effect; BI2SE3;

D O I：

10.1021/acs.nanolett.5b03770

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)(2)Se-3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

引用

页码：8245 / 8249

页数：5

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