Gain characteristics of SQUID-based RF amplifiers depending on device parameters

被引：0

作者：

Lee, Y. H. ^{[1
]}

Yu, K. K. ^{[1
]}

Kim, J. M. ^{[1
]}

Lee, S. K. ^{[1
]}

Chong, Y. ^{[2
]}

Oh, S. J. ^{[3
]}

Semertzidis, Y. K. ^{[3
]}

机构：

[1] Korea Res Inst Stand & Sci, Ultralow Magnet Field Team, Daejeon, South Korea

[2] Korea Res Inst Stand & Sci, Quantum Informat Team, Daejeon, South Korea

[3] Inst for Basic Sci Korea, Ctr Axion & Precis Phys Res, Daejeon, South Korea

来源：

PROGRESS IN SUPERCONDUCTIVITY AND CRYOGENICS | 2019年 / 21卷 / 01期

关键词：

SQUID; radio-frequency amplifier; resonance frequency; amplification gain;

D O I：

10.9714/psac.2019.21.1.010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radio-frequency (RF) amplifiers based on direct current (DC) superconducting quantum interference device (SQUID) have low-noise performance for precision physics experiments. Gain curves of SQUID RF amplifiers depend on several parameters of the SQUID and operation conditions. We are developing SQUID RF amplifiers for application to measure very weak RF signals from ultra-low-temperature high-magnetic-field microwave cavity in axion search experiments. In this study, we designed, fabricated and characterized SQUID RF amplifiers with different SQUID parameters, such as number of input coil turn, shunt resistance value of the junction and coupling capacitance in the input coil, and compared the results.

引用

页码：10 / 14

页数：5

共 3 条

[1] Correction of resonance frequency for RF amplifiers based on superconducting quantum interference device
Lee, Y. H.
Yu, K. K.
Kim, J. M.
Lee, S. K.
Chong, Y.
Oh, S. J.
Semertzidis, Y. K.
PROGRESS IN SUPERCONDUCTIVITY AND CRYOGENICS, 2018, 20 (04): : 6 - 10
[2] Macroscopic quantum device based on a rf SQUID system
Granata, C
Corato, V
Longobardi, L
Rombetto, S
Russo, M
Ruggiero, B
Silvestrini, P
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2003, 13 (02) : 1001 - 1004
[3] Switching device based on RF-field-driven high-TC SQUID
Kondo, T
Mizugaki, Y
Saito, K
Nakajima, K
Yamashita, T
IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (01): : 55 - 60

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