Growth of void free Cu2ZnSnS4 (CZTS) thin films by sulfurization of stacked metallic precursor films

被引：25

作者：

Pawar, S. M. ^{[1
]}

Inamdar, A. I. ^{[1
]}

Gurav, K. V. ^{[2
]}

Shin, S. W. ^{[2
]}

Jo, Yongcheol ^{[1
]}

Kim, Jongmin ^{[1
]}

Im, Hyunsik ^{[1
]}

Kim, Jin Hyeok ^{[2
]}

机构：

[1] Dongguk Univ, Div Phys & Semicond Sci, Seoul 100715, South Korea

[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

来源：

VACUUM | 2014年 / 104卷

基金：

新加坡国家研究基金会;

关键词：

Cu2ZnSnS4; Sulfurization; Stacked metallic precursor films; RF sputtering method; EFFICIENCY;

D O I：

10.1016/j.vacuum.2014.01.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A void free Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated glass substrates by using sulfurization of sputtered stack metallic precursor at 580 degrees C in (N-2 + H2S) atmosphere for different sulfurization times ranging from 60 min to 180 min. The effects of sulfurization time on the structural, morphological, chemical and optical properties of the sulfurized CZTS thin films have been investigated. All the sulfurized CZTS thin films exhibit a polycrystalline kesterite crystal structure with a void free densely packed large grain morphology. Compositional study indicates that the Zn/Sn ratio increases with increasing sulfurization time, and for long sulfurization the sulfur content in the film decreases. The band gap energies of the sulfurized CZTS thin films are found to be in the range between 1.51 and 1.64 eV. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：57 / 60

页数：4

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