Electrical resistivity and point contact studies on Al-Pd-Mn icosahedral quasicrystals

被引：2

作者：

Gayathri, N

Goswami, R

Banerjee, S

机构：

[1] INDIAN INST SCI,DEPT MET,BANGALORE 560012,KARNATAKA,INDIA

[2] SAHA INST NUCL PHYS,SSMP DIV,CALCUTTA 700064,W BENGAL,INDIA

来源：

BULLETIN OF MATERIALS SCIENCE | 1997年 / 20卷 / 04期

关键词：

electrical resistivities; point contact studies; Al-Pd-Mn;

D O I：

10.1007/BF02744767

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurement of the electrical resistivity rho(T) and point contact differential conductance (dI/dV) for icosahedral Al70Pd30-xMnx (x = 7,9 and 11) at low temperatures. Below 10K, for x = 11, rho(T) follows a log T dependence. All the three compositions show a sharp minimum in the differential conductance near zero bias. Magnitude of the dip in the point contact conductance increases as the Mn concentration increases. The dip near zero bias also follows a log V dependence for V < 30 mV.

引用

页码：531 / 534

页数：4

共 18 条

[11]

Kimura K, 1991, QUASICRYSTALS STATE, P313

[12] ANISOTROPY IN NONLINEAR MAGNETIZING PROCESS IN SINGLE-GRAINED ICOSAHEDRAL AL-PD-MN QUASI-CRYSTAL [J].