Comment on "Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)"

被引：22

作者：

Kocan, Pavel ^{[1
]}

Sobotik, Pavel ^{[1
]}

Ost'adal, Ivan ^{[1
]}

机构：

[1] Charles Univ Prague, Fac Math & Phys, Dept Electron & Vacuum Phys, CR-18000 Prague 8, Czech Republic

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.74.037401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Albao [Phys. Rev. B 72, 035426 (2005)] recently reported on a study on room temperature growth of Ga on Si(100). Monotonically decreasing island size distribution observed by means of scanning tunneling microscopy was explained using kinetic Monte Carlo simulations with a complex mechanism of atom capture. In the simulation, influence of the C-type defects on the growth process is not considered. These defects are commonly observed on the Si(100) surfaces and act as initial adsorption sites for deposited metal atoms.

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