DESIGN OF X-BAND 6-BIT CMOS PHASE SHIFTER FOR PHASED ARRAY T/R MODULES

被引：8
|
作者：
Kang, Dong-Woo [1 ]
Ku, Bon-Hyun [2 ]
Hong, Songcheol [2 ]
机构：
[1] Univ Calif San Diego, Dept Elect Engn & Comp Sci, La Jolla, CA 92093 USA
[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 10期
关键词：
CMOS integrated circuits; microstrip circuit; phase shifter; phased array radar;
D O I：
10.1002/mop.24663
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents the design of a 6-bit phase shifter in a 0.18-mu m CMOS technology for X-band phased array radar application. Meandered microstrip lines and compact circuit designs techniques yield a chip with 1.9 mm(2) die area. The fabricated phase shifter demonstrates a typical 15.7 +/- 1.1 dB insertion loss and a 4 degrees rms phase shift error at 9.5 GHZ. To the author's knowledge, this is the first demonstration of a 6-bit phase shifter using CMOS switches with the lowest die area among reciprocal digital phase shifters at X-band. (C) 2009 Wiley periodicals. Inc. Microwave Opt Technol Lett 51: 2404-2406, 2009 Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24663
引用
收藏
页码：2404 / 2406
页数：3
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