Preparation of high-quality anthracene crystals using double run selective self-seeding vertical Bridgman technique (DRSSVBT)

被引:22
作者
Arulchakkaravarthi, A
Laksmanaperumal, CK
Santhanaraghavan, P
Sivaji, K
Kumar, R
Muralithar, S
Ramasamy, P [1 ]
机构
[1] Anna Univ, Ctr Crystal Growth, Madras 25, Tamil Nadu, India
[2] Natl Tsing Hua Univ, Tsing Chu, Taiwan
[3] Univ Madras, Ctr Mat Sci, Dept Nucl Phys, Madras 25, Tamil Nadu, India
[4] Ctr Nucl Sci, New Delhi 110067, India
关键词
defects; X-ray diffraction; Bridgman technique; growth from melt; aromatic compounds; organic materials; scintillator materials; scintillators;
D O I
10.1016/S0022-0248(02)01696-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Anthracene crystals were grown by double run selective self-seeding vertical Bridgman technique. The crystal is subjected to FTIR spectral studies, etching studies and double crystal X-ray rocking studies. The crystals grown were tested for their performance as scintillators by a timing resolution setup using Na-22 511 keV gamma source. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:85 / 89
页数:5
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