Preparation of CeO2/La2Zr2O7 Buffer Layers on Textured Ni5W Substrates by Chemical Solution Deposition Method

CeO2 caped La2Zr2O7 buffer layers on cube- textured Ni5W substrates were fabricated by the method of chemical solution deposition(CSD). The orientation of both LZO film and CeO2/LZO buffer layer was investigated using conventional XRD and X-ray four circle diffractometers, respectively. The results reveal that both the LZO film on Ni5W substrates and CeO2 film on LZO buffer layer are grown epitaxially. The value of Full Width at Half Maximum (FWHM) of (111) Phi scan of CeO2/LZO buffer layer is around 8 degrees, and the FWHM of (200) omega-scan of CeO2/La2Zr2O7 buffer layer is 6.5 degrees, indicating a good in- plan orientation of the as obtained buffer layers. It was observed by the high resolution SEM that the surface of LZO buffer layer is crack- free and very dense. The surface result observed by AFM indicates a very smooth CeO2 surface with 5.9 nm of the root mean square roughness measured in an areas of 30 X 30 mu m(2). AES depth profile results of CeO2/LZO buffer layers shows that the deposited LZO film could effectively prevent the diffusion of Ni into the buffer layer.