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- [1] Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2ADVANCED MATERIALS, 2016, 28 (41) : 9133 - +Wang, Zhenwei论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi ArabiaHe, Xin论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi ArabiaZhang, Xi-Xiang论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi ArabiaAlshareef, Husam N.论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia
- [2] Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodesSCIENTIFIC REPORTS, 2016, 6Kim, Jae-Keun论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaCho, Kyungjune论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaKim, Tae-Young论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaPak, Jinsu论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaJang, Jingon论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaSong, Younggul论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaKim, Youngrok论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaChoi, Barbara Yuri论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaChung, Seungjun论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea论文数: 引用数: h-index:机构:Lee, Takhee论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea
- [3] Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodesScientific Reports, 6Jae-Keun Kim论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomyKyungjune Cho论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomyTae-Young Kim论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomyJinsu Pak论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomyJingon Jang论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomyYounggul Song论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomyYoungrok Kim论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomyBarbara Yuri Choi论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomySeungjun Chung论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomyWoong-Ki Hong论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and AstronomyTakhee Lee论文数: 0 引用数: 0 h-index: 0机构: and Institute of Applied Physics,Department of Physics and Astronomy
- [4] Tunable GaTe-MoS2 van der Waals p-n Junctions with Novel Optoelectronic PerformanceNANO LETTERS, 2015, 15 (11) : 7558 - 7566Wang, Feng论文数: 0 引用数: 0 h-index: 0机构: Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R ChinaWang, Zhenxing论文数: 0 引用数: 0 h-index: 0机构: Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R ChinaXu, Kai论文数: 0 引用数: 0 h-index: 0机构: Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R ChinaWang, Fengmei论文数: 0 引用数: 0 h-index: 0机构: Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R ChinaWang, Qisheng论文数: 0 引用数: 0 h-index: 0机构: Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R ChinaHuang, Yun论文数: 0 引用数: 0 h-index: 0机构: Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R ChinaYin, Lei论文数: 0 引用数: 0 h-index: 0机构: Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R ChinaHe, Jun论文数: 0 引用数: 0 h-index: 0机构: Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
- [5] Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructureAPPLIED PHYSICS LETTERS, 2018, 112 (12)Pisoni, Riccardo论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, Switzerland Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, SwitzerlandLei, Zijin论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, Switzerland Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, SwitzerlandBack, Patrick论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Inst Technol, Inst Quantum Elect, Dept Phys, CH-8093 Zurich, Switzerland Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, SwitzerlandEich, Marius论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, Switzerland Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, SwitzerlandOverweg, Hiske论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, Switzerland Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, SwitzerlandLee, Yongjin论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, Switzerland Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, SwitzerlandWatanabe, Kenji论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, SwitzerlandTaniguchi, Takashi论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, SwitzerlandIhn, Thomas论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, Switzerland Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, SwitzerlandEnsslin, Klaus论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, Switzerland Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, Switzerland
- [6] Van der Waals Coupled Organic Molecules with Monolayer MoS2 for Fast Response Photodetectors with Gate-Tunable ResponsivityACS NANO, 2018, 12 (04) : 4062 - 4073Huang, Yu论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R ChinaZhuge, Fuwei论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R ChinaHou, Junxian论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ Engn, Coll Mat Sci & Engn, Dept Composite Mat & Engn, Handan 056038, Peoples R China Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R ChinaLv, Liang论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R ChinaLuo, Peng论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R ChinaZhou, Nan论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R ChinaGan, Lin论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R ChinaZhai, Tianyou论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China Tianjin Univ, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China
- [7] Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p-n JunctionsACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (11) : 5487 - 5497Lv, Yanhui论文数: 0 引用数: 0 h-index: 0机构: Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R ChinaWu, Che-Yu论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R ChinaZhao, Yue论文数: 0 引用数: 0 h-index: 0机构: Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R ChinaWu, Gang论文数: 0 引用数: 0 h-index: 0机构: Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R ChinaAbid, Mohamed论文数: 0 引用数: 0 h-index: 0机构: Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China论文数: 引用数: h-index:机构:Choi, Miri论文数: 0 引用数: 0 h-index: 0机构: Korea Basic Sci Inst, Chuncheon Ctr, Chunchon 24341, South Korea Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R ChinaCoileain, Cormac O.论文数: 0 引用数: 0 h-index: 0机构: Univ Bundeswehr Munich, Fac Elect Engn & Informat Technol, Inst Phys, EIT 2, D-85577 Neubiberg, Germany Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China论文数: 引用数: h-index:机构:Chang, Ching-Ray论文数: 0 引用数: 0 h-index: 0机构: Chung Yuan Christian Univ, Quantum Informat Ctr, Taoyuan 32023, Taiwan Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R ChinaWu, Yuh-Renn论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R ChinaWu, Han-Chun论文数: 0 引用数: 0 h-index: 0机构: Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
- [8] Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctionsPHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (40) : 27750 - 27753Wang, Cong论文数: 0 引用数: 0 h-index: 0机构: Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaYang, Shengxue论文数: 0 引用数: 0 h-index: 0机构: Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaXiong, Wenqi论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaXia, Congxin论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaCai, Hui论文数: 0 引用数: 0 h-index: 0机构: Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaChen, Bin论文数: 0 引用数: 0 h-index: 0机构: Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaWang, Xiaoting论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaZhang, Xinzheng论文数: 0 引用数: 0 h-index: 0机构: Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R China Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaWei, Zhongming论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaTongay, Sefaattin论文数: 0 引用数: 0 h-index: 0机构: Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaLi, Jingbo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R ChinaLiu, Qian论文数: 0 引用数: 0 h-index: 0机构: Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R China Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China Nankai Univ, TEDA Inst Appl Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R China
- [9] Gate-tunable rectification and photoresponse in a MoTe2/SnS2 van der Waals heterostructure based P-N diodeJOURNAL OF MATERIALS CHEMISTRY C, 2023, 11 (40) : 13981 - 13990Elahi, Ehsan论文数: 0 引用数: 0 h-index: 0机构: Sejong Univ, Dept Phys & Astron, 209 Neungdong Ro, Seoul 05006, South Korea Sejong Univ, Dept Phys & Astron, 209 Neungdong Ro, Seoul 05006, South KoreaKhan, Muhammad Asghar论文数: 0 引用数: 0 h-index: 0机构: Sejong Univ, Dept Phys & Astron, 209 Neungdong Ro, Seoul 05006, South Korea Sejong Univ, Dept Phys & Astron, 209 Neungdong Ro, Seoul 05006, South KoreaJeon, Jaeho论文数: 0 引用数: 0 h-index: 0机构: Sejong Univ, Dept Phys & Astron, 209 Neungdong Ro, Seoul 05006, South Korea Sejong Univ, Dept Phys & Astron, 209 Neungdong Ro, Seoul 05006, South Korea论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [10] Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals InterfacesNANO LETTERS, 2020, 20 (04) : 2907 - 2915Miao, Jinshui论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USA Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USALiu, Xiwen论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USA Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USAJo, Kiyoung论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USA Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USAHe, Kang论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Mat Sci & Engn, Philadelphia, PA 19104 USA Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USASaxena, Ravindra论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USA Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USASong, Baokun论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USA Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USAZhang, Huiqin论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USA Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USAHe, Jiale论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USAHan, Myung-Geun论文数: 0 引用数: 0 h-index: 0机构: Brookhaven Natl Lab, Upton, NY 11973 USA Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USAHu, Weida论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USAJariwala, Deep论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USA Univ Penn, Elect & Syst Engn, Philadelphia, PA 19104 USA