Temperature dependence of resistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions

被引：35
|
作者：
Ma, Q. L. [1 ]
Wang, S. G. [1 ,2 ]
Zhang, J. [1 ]
Wang, Yan [1 ]
Ward, R. C. C. [2 ]
Wang, C. [3 ]
Kohn, A. [3 ]
Zhang, X. -G. [4 ,5 ]
Han, X. F. [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China
[2] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci & Comp Sci, Oak Ridge, TN 37831 USA
[5] Oak Ridge Natl Lab, Div Math, Oak Ridge, TN 37831 USA
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
epitaxial layers; iron; magnesium compounds; magnetic tunnelling; ROOM-TEMPERATURE; LARGE MAGNETORESISTANCE; THIN-FILM; INTERFACE; BARRIERS;
D O I：
10.1063/1.3194150
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The temperature dependence of resistance in parallel (P) and antiparallel (AP) configurations (R-P,R-AP) has been investigated in epitaxial Fe/MgO/Fe junctions with varying MgO barrier thicknesses t(MgO). R-AP exhibits a substantial decrease with increasing temperature for samples with t(MgO) ranging from 3.0 to 1.5 nm. In contrast, R-P is approximately temperature independent when t(MgO)=3.0 nm and increases with temperature when t(MgO)=2.1 and 1.5 nm. Possible origins of this temperature dependence of resistance, which include taking into account a spin independent term and consideration of spin-flip scattering, are discussed. We attribute the temperature dependence of R-P,R-AP to the misalignment of magnetic moments in the electrodes due to thermal excitations and its effect on the spin dependent tunneling.
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页数：3
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