Solution processed NiOx hole-transporting material for all-inorganic planar heterojunction Sb2S3 solar cells

被引：61

作者：

Jin, Xin ^{[1
]}

Yuan, Yue ^{[1
]}

Jiang, Chenhui ^{[1
]}

Ju, Huanxin ^{[2
]}

Jiang, Guoshun ^{[1
]}

Liu, Weifeng ^{[1
]}

Zhu, Changfei ^{[1
]}

Chen, Tao ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China

[2] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2018年 / 185卷

基金：

中国国家自然科学基金;

关键词：

Sb2S3; Solar cell; NiOx; O-2; plasma; All-inorganic device; HIGH-PERFORMANCE; EFFICIENT; ABSORBER; POLYMER; FILM; INTERFACE; STABILITY; LAYERS;

D O I：

10.1016/j.solmat.2018.06.017

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Light-harvesting material Sb2S3 has recently attracted tremendous attention due to its excellent photovoltaic properties. Extensive efforts have been exerted to improve the power conversion efficiency through process innovation, interface modification and band gap engineering. In this study, we report an all-inorganic planar heterojunction Sb2S3 solar cell using NiOx as hole extraction material, which is deposited from preformed NiOx nanoparticle solution. We demonstrate that the device performance can be significantly enhanced upon O-2 plasma treatment on NiOx layer. As a result, O-2 plasma-treated NiOx hole conductor leads to a 43% enhancement in power conversion efficiency when compared to untreated one, delivering an efficiency of 3.51%. The enhancement mechanisms are interpreted in terms of electronic structures and interfacial charge transport properties characterized by synchrotron-based high resolution ultraviolet photoelectron spectroscopy and electro-chemical impedance spectroscopy. This work provides a choice of novel inorganic hole-transporting material for the preparation of stable and efficient all-inorganic solar cell device based on Sb2S3 as well as Sb-2(S,Se)(3).

引用

页码：542 / 548

页数：7

共 46 条

[1] Electrical and optical properties of narrow-band materials [J].