Terahertz parametric gain in semiconductor superlattices in the absence of electric domains

被引：22

作者：

Hyart, Timo ^{[1
]}

Alexeeva, Natalia V. ^{[1
]}

Leppanen, Ahti ^{[1
]}

Alekseev, Kirill N. ^{[1
]}

机构：

[1] Univ Loughborough, Dept Phys, Loughborough LE11 3TU, Leics, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 13期

基金：

芬兰科学院;

关键词：

D O I：

10.1063/1.2357579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors theoretically show that conditions for terahertz gain and conditions for formation of destructive electric domains in semiconductor superlattices are fairly different in the case of parametric generation and amplification. Action of an unbiased high-frequency electric field on a superlattice causes a periodic variation of energy and effective mass of miniband electrons. This parametric effect can result in a significant gain at some even harmonic of the pump frequency without the formation of electric domains and corruption from pump harmonics. (c) 2006 American Institute of Physics.

引用

页数：3

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