Structural characterization of thin 3C-SiC films annealed by the flash lamp process

被引：4
|
作者：
Polychroniadis, E [1 ]
Stoemenos, J
Ferro, G
Monteil, Y
Panknin, D
Skorupa, W
机构：
[1] Aristotle Univ Thessaloniki, GR-54006 Thessaloniki, Greece
[2] Univ Lyon 1, F-69622 Villeurbanne, France
[3] Forschungszentrum Rossendorf EV, Dresden, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷
关键词：
thin films; defects; annealing;
D O I：
10.4028/www.scientific.net/MSF.457-460.351
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The microstructure of the annealed by flash lamp process 35nm thick 3C-SiC films epitaxially grown on Si, is studied by transmission electron microscopy. The flash lamp annealing aparatus consists of Xe lamps powered by discharging capacitors producing pulses of 20 ins. The partial dissolution of the SiC film into Si substrate and subsequent recrystallization of the film improves the quality of the films.
引用
收藏
页码：351 / 354
页数：4
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