New evidence of interfacial oxide traps in n-type 4H-and 6H-SiC MOS structures

被引：11

作者：

Olafsson, HÖ ^{[1
]}

Sveinbjörnsson, EÖ

Rudenko, TE

Kilchytska, VI

Tyagulski, IP

Osiyuk, IN

机构：

[1] Chalmers Univ Technol, Dept Microelect, Solid State Elect Lab, SE-41296 Gothenburg, Sweden

[2] Chalmers Univ Technol, Dept Microelect, Microtechnol Ctr, SE-41296 Gothenburg, Sweden

[3] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

interface states; MOS; thermally stimulated currents;

D O I：

10.4028/www.scientific.net/MSF.389-393.1001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We find a high density of shallow slow interface states in n type 4H-SiC metal-oxide-semiconductor (MOS) capacitors using thermally stimulated current analysis. The energy distribution of the interface states is non-uniform and the interface state density is peaked approximately 0.14+/-0.03 eV below the conduction band edge. The majority of the interface states are slow with an electron capture cross section smaller than 10(-19) cm(2) at 175 K. Such states are absent in it type 6H-SiC MOS capacitors.

引用

页码：1001 / 1004

页数：4

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