Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots

被引：0
|
作者：
Haendel, KM
Lenz, C
Denker, U
Schmidt, OG
Eberl, K
Haug, RJ
机构：
[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
self-assembled quantum dots; germanium; silicon-germanium;
D O I：
10.1016/S1386-9477(02)00276-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Magneto-tunnelling for holes was studied in SiGe/Si SiGe heterostructures with Ge quantum dots of the 'hut cluster' type in the middle of the Si-layer. At temperatures below 10 K two different transport regimes can be distinguished in the current-voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current-voltage characteristics. The influence of different layer structures is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：757 / 760
页数：4
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