Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots

被引：0

作者：

Haendel, KM

Lenz, C

Denker, U

Schmidt, OG

Eberl, K

Haug, RJ

机构：

[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

self-assembled quantum dots; germanium; silicon-germanium;

D O I：

10.1016/S1386-9477(02)00276-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magneto-tunnelling for holes was studied in SiGe/Si SiGe heterostructures with Ge quantum dots of the 'hut cluster' type in the middle of the Si-layer. At temperatures below 10 K two different transport regimes can be distinguished in the current-voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current-voltage characteristics. The influence of different layer structures is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

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收藏

页码：757 / 760

页数：4

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