Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

被引：14

作者：

Baji, Zs. ^{[1
]}

Labadi, Z. ^{[1
]}

Molnar, Gy. ^{[1
]}

Pecz, B. ^{[1
]}

Vad, K. ^{[2
]}

Horvath, Z. E. ^{[1
]}

Szabo, P. J. ^{[3
]}

Nagata, T. ^{[4
]}

Volk, J. ^{[1
]}

机构：

[1] Inst Tech Phys & Mat Sci, Res Ctr Nat Sci, H-1121 Budapest, Hungary

[2] Hungarian Acad Sci, ATOMKI, Inst Nucl Res, H-4001 Debrecen, Hungary

[3] Budapest Univ Technol & Econ, H-1111 Budapest, Hungary

[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

THIN SOLID FILMS | 2014年 / 562卷

关键词：

Atomic layer deposition; Zinc oxide; Conductive layers; Epitaxy; Gallium doping; THIN-FILMS; IN-SITU; SAPPHIRE; TEMPERATURE; GROWTH; SUBSTRATE;

D O I：

10.1016/j.tsf.2014.04.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The possibility of depositing conductive epitaxial layers with atomic layer deposition has been examined. Epitaxial ZnO layers were grown on GaN and doped with Al. The resistivity of the epitaxial layers is between 0.6 and 2 * 10(-4) Omega cm with both the mobilities and the carrier concentrations being very high. The source of the high carrier concentration was found to be a combination of Al and Ga doping, the latter resulted by Ga atoms diffusing into the ZnO from the GaN substrate. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：485 / 489

页数：5

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