Enhancement of the magnetoresistance by inserting a nano oxide layer in Mn-Ir bottom spin valve

被引：0

作者：

Yoon, SY ^{[1
]}

Lee, DH ^{[1
]}

Lee, JY ^{[1
]}

Kim, YS ^{[1
]}

Yoon, DH ^{[1
]}

Suh, SJ ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Suwon 440746, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 44卷 / 05期

关键词：

specular spin valve; nano oxide layer; MR%; exchange bias field;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Si/Ta/Ni-Fe/Mn-Ir/Co-Fe/NOL/Co-Fe/Cu/Co-Fe/capping bottom specular spin valves were prepared by using the DC magnetron sputtering method. The specular spin valve (with nano oxide layer (NOL)) exhibited higher MR% (Magnetoresistance) ratio and H-ex (exchange biased field) than those of a conventional spin valve (without NOL). Also, the conventional spin valve showed a higher H-in (interlayer coupling field) than the specular spin valve. RBS (Rutherford back scattering) and TEM (Transmission electron microscopy) analyses indicated that thickness of NOL was about 2 nm. The thermal aging experiment showed that the Ta capping layer was more stable than the Al capping layer.

引用

页码：1075 / 1078

页数：4

共 11 条

[1]

Cho HG, 2002, J KOREAN PHYS SOC, V41, P753

[2] Oxygen as a surfactant in the growth of giant magnetoresistance spin valves [J].

Egelhoff, WF ;

Chen, PJ ;

Powell, CJ ;

Stiles, MD ;

McMichael, RD ;

Judy, JH ;

Takano, K ;

Berkowitz, AE .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) :6142-6151

[3] Effect of thin oxide layers incorporated in spin valve structures [J].

Gillies, MF ;

Kuiper, AET ;

Leibbrandt, GWR .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6922-6924

[4]

IWASAKI H, 1999, DIGESTS INTERMAG 99

[5]

IWASKAI H, 1996, Patent No. 5549978

[6]

Kim YK, 2003, J KOREAN PHYS SOC, V43, P396

[7]

Sakakima H, 2000, J MAGN MAGN MATER, V210, pL20

[8] Enhanced giant magnetoresistance in spin-valves sandwiched between insulating NiO [J].

Swagten, HJM ;

Strijkers, GJ ;

Bloemen, PJH ;

Willekens, MMH ;

deJonge, WJM .

PHYSICAL REVIEW B, 1996, 53 (14) :9108-9114

[9] Spin valve sensors with synthetic free and pinned layers [J].

Veloso, A ;

Freitas, PP .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :5744-5746

[10] Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers [J].

Veloso, A ;

Freitas, PP ;

Wei, P ;

Barradas, NP ;

Soares, JC ;

Almeida, B ;

Sousa, JB .

APPLIED PHYSICS LETTERS, 2000, 77 (07) :1020-1022

← 1 2 →