Conductivity of a Spin-Polarized Two-Dimensional Hole Gas at Very Low Temperature

被引:2
作者
Dlimi, S. [1 ]
El Kaaouachi, A. [1 ]
Limouny, L. [1 ]
El Idrissi, H. [2 ]
Zatni, A. [3 ]
Sybous, A. [1 ]
Narjis, A. [1 ]
Errai, M. [1 ]
Daoudi, E. [1 ]
机构
[1] Univ Ibn Zohr, Dept Phys, Fac Sci, Res Grp ESNPS, BP 8106, Hay Dakhla 80000, Agadir, Morocco
[2] Hassan II Univ Casablanca, Fac Sci & Technol Mohammedia, Dept Phys, Agadir, Morocco
[3] Ecole Technol Agadir, Lab MSTI, Agadir, Morocco
来源
ADVANCES IN CRYOGENIC ENGINEERING, VOL 60 | 2014年 / 1574卷
关键词
Electrical conductivity; 2D Spin polarized; GaAs hole gas; Low temperature; METAL-INSULATOR-TRANSITION; TRANSPORT;
D O I
10.1063/1.4860642
中图分类号
O414.1 [热力学];
学科分类号
摘要
In the ballistic regime where k(B)T tau/h >= 1, the temperature dependence of the metallic conductivity in a two-dimensional hole system of gallium arsenide, is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization, but reappears again in the fully spin-polarized state, being, however, suppressed relative to the zero magnetic field case. The analysis of the degree of suppression can distinguish between screening and interaction-based theories. We show that in a fully polarized spin state, the effects of disorder are dominant and approach a strong localization regime, which is contrary to the behavior of 2D electron systems in a weakly disordered unpolarized state. It was found that the elastic relaxation time correction, depending on the temperature, changed significantly with the degree of spin polarization, to reach a minimum just below the start of the spin-polarized integer, where the conductivity is practically independent of temperature.
引用
收藏
页码:314 / 319
页数:6
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