Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

被引：23

作者：

Brendel, Moritz ^{[1
]}

Helbling, Markus ^{[1
]}

Knigge, Andrea ^{[1
]}

Brunner, Frank ^{[1
]}

Weyers, Markus ^{[1
]}

机构：

[1] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 24期

关键词：

DETECTORS; HETEROSTRUCTURES; TRANSISTORS; SAPPHIRE;

D O I：

10.1063/1.4939283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comprehensive study on top-and bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductormetal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50V reaching about 50% for 0.1 lm and 67% for 0.5 mu m thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al0.5Ga0.5N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers. (C) 2015 AIP Publishing LLC.

引用

页数：5

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