Giant Electroresistance in Ferroionic Tunnel Junctions

被引：67

作者：

Li, Jiankun ^{[1
]}

Li, Ning ^{[2
]}

Ge, Chen ^{[1
,3
]}

Huang, Heyi ^{[1
]}

Sun, Yuanwei ^{[2
]}

Gao, Peng ^{[2
,4
]}

He, Meng ^{[1
]}

Wang, Can ^{[1
,5
]}

Yang, Guozhen ^{[1
]}

Jin, Kuijuan ^{[1
,5
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Peking Univ, Sch Phys, Int Ctr Quantum Mat & Electron Microscopy Lab, Beijing 100871, Peoples R China

[3] Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[5] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

来源：

ISCIENCE | 2019年 / 16卷

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

PHASE-TRANSITIONS; POLARIZATION; STATES;

D O I：

10.1016/j.isci.2019.05.043

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancies. An extremely large electroresistance with ON/OFF ratios of 5.1 x10(7) at room temperature and 2.1 x10(9) at 10 K is achieved, using an ultrathin BaTiO(3-delta )layer as the ferroelectric barrier and a semiconducting Nb-doped SrTiO3 substrate as the bottom electrode. The results point toward an appealing way for the design of high-performance resistive switching devices based on ultrathin oxide heterostructures by ionic controlled interface engineering.

引用

页码：368 / +

页数：37

共 56 条

[1] Tunable Oxygen Diffusion and Electronic Conduction in SrTiO3 by Dislocation-Induced Space Charge Fields [J].

Adepalli, Kiran K. ;

Yang, Jing ;

Maier, Joachim ;

Tuller, Harry L. ;

Yildiz, Bilge .

ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (22)

[2] EFFECTS OF SURFACE OXYGEN VACANCIES ON ELECTRONIC STATES OF TIO2(110), TIO2(001) AND SRTIO3(001) SURFACES [J].

AIURA, Y ;

NISHIHARA, Y ;

HARUYAMA, Y ;

KOMEDA, T ;

KODAIRA, S ;

SAKISAKA, Y ;

MARUYAMA, T ;

KATO, H .

PHYSICA B, 1994, 194 (pt 1) :1215-1216

[3] Impact of semiconducting electrodes on the electroresistance of ferroelectric tunnel junctions [J].

Asa, M. ;

Bertacco, R. .

APPLIED PHYSICS LETTERS, 2018, 112 (08)

[4] Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy [J].

Balke, Nina ;

Maksymovych, Petro ;

Jesse, Stephen ;

Herklotz, Andreas ;

Tselev, Alexander ;

Eom, Chang-Beom ;

Kravchenko, Ivan I. ;

Yu, Pu ;

Kalinin, Sergei V. .

ACS NANO, 2015, 9 (06) :6484-6492

[5] Learning through ferroelectric domain dynamics in solid-state synapses [J].

Boyn, Soeren ;

Grollier, Julie ;

Lecerf, Gwendal ;

Xu, Bin ;

Locatelli, Nicolas ;

Fusil, Stephane ;

Girod, Stephanie ;

Carretero, Cecile ;

Garcia, Karin ;

Xavier, Stephane ;

Tomas, Jean ;

Bellaiche, Laurent ;

Bibes, Manuel ;

Barthelemy, Agnes ;

Saighi, Sylvain ;

Garcia, Vincent .

NATURE COMMUNICATIONS, 2017, 8

[6] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[7]

Chanthbouala A, 2012, NAT MATER, V11, P860, DOI [10.1038/NMAT3415, 10.1038/nmat3415]

[8] Controlling the Carrier Density of SrTiO3-Based Heterostructures with Annealing [J].

Christensen, Dennis V. ;

von Soosten, Merlin ;

Trier, Felix ;

Jespersen, Thomas S. ;

Smith, Anders ;

Chen, Yunzhong ;

Pryds, Nini .

ADVANCED ELECTRONIC MATERIALS, 2017, 3 (08)

[9] Resistive switching in metal-ferroelectric-metal junctions [J].

Contreras, JR ;

Kohlstedt, H ;

Poppe, U ;

Waser, R ;

Buchal, C ;

Pertsev, NA .

APPLIED PHYSICS LETTERS, 2003, 83 (22) :4595-4597

[10] Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM [J].

Cooper, David ;

Baeumer, Christoph ;

Bernier, Nicolas ;

Marchewka, Astrid ;

La Torre, Camilla ;

Dunin-Borkowski, Rafal E. ;

Menzel, Stephan ;

Waser, Rainer ;

Dittmann, Regina .

ADVANCED MATERIALS, 2017, 29 (23)

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