Deformable Convolutional Networks for Efficient Mixed-Type Wafer Defect Pattern Recognition

被引:114
|
作者
Wang, Junliang [1 ]
Xu, Chuqiao [2 ]
Yang, Zhengliang [1 ]
Zhang, Jie [1 ]
Li, Xiaoou [3 ]
机构
[1] Donghua Univ, Coll Mech Engn, Shanghai 201620, Peoples R China
[2] Shanghai Jiao Tong Univ, Sch Mech Engn, Shanghai 200240, Peoples R China
[3] CINVESTAV IPN, Dept Comp Sci, Mexico City 07360, DF, Mexico
基金
中国国家自然科学基金;
关键词
Feature extraction; Pattern recognition; Semiconductor device modeling; Graphics; Machine learning; Integrated circuits; Task analysis; Semiconductor manufacturing; wafer defects; pattern recognition; deformable convolutional networks; NEURAL-NETWORK; SEMICONDUCTOR; CLASSIFICATION; DIAGNOSIS;
D O I
10.1109/TSM.2020.3020985
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Defect pattern recognition (DPR) of wafer maps is critical for determining the root cause of production defects, which can provide insights for the yield improvement in wafer foundries. During wafer fabrication, several types of defects can be coupled together in a piece of wafer, it is called mixed-type defects DPR. To detect mixed-type defects is much more complicated because the combination of defects may vary a lot, from the type of defects, position, angle, number of defects, etc. Deep learning methods have been a good choice for complex pattern recognition problems. In this article, we propose a deformable convolutional network (DC-Net) for mixed-type DPR (MDPR) in which several types of defects are coupled together in a piece of wafer. A deformable convolutional unit is designed to selectively sample from mixed defects, then extract high-quality features from wafer maps. A multi-label output layer is improved with a one-hot encoding mechanism, which decomposes extract mixed features into each basic single defect. The experiment results indicate that the proposed DC-Net model outperforms conventional models and other deep learning models. Further results of the interpretable analysis reveal that the proposed DC-Net can accurately pinpoint the defects areas of wafer maps with noise points, which is beneficial for mixed-type DPR problems.
引用
收藏
页码:587 / 596
页数:10
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