Raman, x-ray diffraction, and photoemission measurements on C60 and doped C60 films

被引:0
作者
Sharma, SC [1 ]
Ha, B [1 ]
Rhee, JH [1 ]
Li, Y [1 ]
机构
[1] Univ Texas, Dept Phys & Mat Sci, Arlington, TX 76019 USA
来源
FRONTIERS OF HIGH PRESSURE RESEARCH II: APPLICATION OF HIGH PRESSURE TO LOW-DIMENSIONAL NOVEL ELECTRONIC MATERIALS | 2001年 / 48卷
关键词
Fullerenes; high pressure; thin films;
D O I
暂无
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present results from a study of the vibrational, structural, and electronic proper-ties of three samples, C-60 powder, thin films of C-60 and La-doped C-60 We present Raman data for C-60 powder subjected to pressures in a diamond anvil cell, ranging from 0,5 to 14,7 GPa, The material undergoes a structural phase transition between 9,1 and 14,7 GPa. Some of the frequencies of the Raman-active modes soften, while others harden with increasing pressure, The x-ray diffraction data show fcc crystalline structure in the powder and La-doped C-60 films. The C-60 film, however, appears disordered. The electronic valence bands of thin films were measured by photoemission spectroscopy. We observe a higher density of the electronic states in the doped sample.
引用
收藏
页码:493 / 505
页数:13
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