Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edge

被引：15
作者：
Erzeneoglu, S.
Icelli, O. [1 ]
Gurbulak, B.
Ates, A.
机构：
[1] Ataturk Univ, Educ Fac Erzincan, Dept Phys Educ, TR-24030 Erzincan, Turkey
[2] Ataturk Univ, Fac Arts & Sci, Dept Phys, TR-25240 Erzurum, Turkey
来源：
JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER | 2006年 / 102卷 / 03期
关键词：
mass attenuation coefficients; semiconductors; energy dispersive X-ray spectrometry;
D O I：
10.1016/j.jqsrt.2005.06.001
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The mass attenuation coefficients of InSe and InSe having different holmium concentrations were measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe and InSe:holmium(0.0025), InSe:holmium(0.0050), InSe:holmium(0.025) and InSe:holmium(0.05) crystals were grown by the Bridgman-Stocbarger method. The measured values are compared with the theoretical ones obtained using WinXcom which is a Windows version of XCOM. The measurement of mass attenuation coefficients of ternary semiconductors is very important because of its use in technology. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：343 / 347
页数：5
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