Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy

被引：9

作者：

Yang, Jung-Seung ^{[1
]}

Sodabanlu, Hassanet ^{[2
]}

Sugiyama, Masakazu ^{[2
,3
]}

Nakano, Yoshiaki ^{[2
,4
]}

Shimogaki, Yukihiro ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Sch Engn, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[3] Univ Tokyo, Sch Engn, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan

[4] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 05期

关键词：

ULTRAFAST INTERSUBBAND RELAXATION; MU-M; OPTICAL-PROPERTIES; TRANSITION; GAN; GROWTH; DEPOSITION; ABSORPTION; CARBON; ALN;

D O I：

10.1143/APEX.2.051004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN/GaN multi quantum wells (MQWs) with abrupt interface were grown by metal organic vapor phase epitaxy (MOVPE). It was revealed that the interface abruptness and coherency of AlN/GaN MQWs to AlN buffer layer were improved at lower temperature of 930 degrees C. We suggest that the inter-diffusion between wells and barriers was suppressed by lowering growth temperature. The surface of MQWs became smooth at lower temperature of 930 degrees C showing 0.86 nm of root mean square (RMS) value. Therefore, it is strongly suggested that the low temperature growth at 930 degrees C is essential for the fabrication of abrupt and smooth AlN/GaN MQWs by MOVPE. (c) 2009 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[41] Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows
Yoshida, Shin
Shojiki, Kanako
Miyake, Hideto
Uemukai, Masahiro
Tanikawa, Tomoyuki
Katayama, Ryuji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (03)
[42] Low-temperature metalorganic vapor phase epitaxy (MOVPE) of GaN using tertiarybutylhydrazine
Pohl, UW
Knorr, K
Möller, C
Gernert, U
Richter, W
Bläsing, J
Christen, J
Gottfriedsen, J
Schumann, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (2A): : L105 - L107
[43] GaN/AIN multiple quantum wells grown on GaN-AIN waveguide structure by metalorganic vapor-phase epitaxy
Chaiyasit Kumtornkittikul
Masakazu Sugiyama
Yoshiaki Nakano
Journal of Electronic Materials, 2006, 35 : 744 - 749
[44] Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy
Zhang, L.
Cheng, K.
Degroote, S.
Leys, M.
Germain, M.
Borghs, G.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)
[45] Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy
Tomida, Y
Nitta, S
Kamiyama, S
Amano, H
Akasaki, I
Otani, S
Kinoshita, H
Liu, R
Bell, A
Ponce, FA
APPLIED SURFACE SCIENCE, 2003, 216 (1-4) : 502 - 507
[46] Metal-Organic Vapor Phase Epitaxy of High-Quality GaN on Al-Pretreated Sapphire Substrates Without Using Low-Temperature Buffer Layers
Takemura, Kodai
Fukui, Takato
Matsuda, Yoshinobu
Funato, Mitsuru
Kawakami, Yoichi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2024, 261 (11):
[47] Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy
Jiang Teng
Xu Sheng-Rui
Zhang Jin-Cheng
Lin Zhi-Yu
Jiang Ren-Yuan
Hao Yue
CHINESE PHYSICS LETTERS, 2015, 32 (08)
[48] Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy
Zubialevich, Vitaly Z.
Pampili, Pietro
Parbrook, Peter J.
CRYSTAL GROWTH & DESIGN, 2020, 20 (06) : 3686 - 3700
[49] Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy
姜腾
许晟瑞
张进成
林志宇
蒋仁渊
郝跃
Chinese Physics Letters, 2015, (08) : 177 - 180
[50] Effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c-plane sapphire by metal organic chemical vapor deposition
Xue, J. S.
Hao, Y.
Zhang, J. C.
Yang, L. A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2371 - 2373

← 1 2 3 4 5 →