Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy

被引：9

作者：

Yang, Jung-Seung ^{[1
]}

Sodabanlu, Hassanet ^{[2
]}

Sugiyama, Masakazu ^{[2
,3
]}

Nakano, Yoshiaki ^{[2
,4
]}

Shimogaki, Yukihiro ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Sch Engn, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[3] Univ Tokyo, Sch Engn, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan

[4] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 05期

关键词：

ULTRAFAST INTERSUBBAND RELAXATION; MU-M; OPTICAL-PROPERTIES; TRANSITION; GAN; GROWTH; DEPOSITION; ABSORPTION; CARBON; ALN;

D O I：

10.1143/APEX.2.051004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN/GaN multi quantum wells (MQWs) with abrupt interface were grown by metal organic vapor phase epitaxy (MOVPE). It was revealed that the interface abruptness and coherency of AlN/GaN MQWs to AlN buffer layer were improved at lower temperature of 930 degrees C. We suggest that the inter-diffusion between wells and barriers was suppressed by lowering growth temperature. The surface of MQWs became smooth at lower temperature of 930 degrees C showing 0.86 nm of root mean square (RMS) value. Therefore, it is strongly suggested that the low temperature growth at 930 degrees C is essential for the fabrication of abrupt and smooth AlN/GaN MQWs by MOVPE. (c) 2009 The Japan Society of Applied Physics

引用

页数：3

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