Intermediate Band to Conduction Band Optical Absorption in ZnTeO

被引：7

作者：

Antolin, E. ^{[1
,2
]}

Chen, C. ^{[3
]}

Ramiro, I. ^{[2
]}

Foley, J. ^{[3
]}

Lopez, E. ^{[2
]}

Artacho, I. ^{[2
]}

Hwang, J. ^{[3
]}

Teran, A. ^{[3
]}

Hernandez, E. ^{[2
]}

Tablero, C. ^{[2
]}

Marti, A. ^{[2
]}

Phillips, J. D. ^{[3
]}

Luque, A. ^{[2
]}

机构：

[1] Inst Microelect Madrid, Ctr Nacl Microelect, Madrid 28760, Spain

[2] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain

[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2014年 / 4卷 / 04期

基金：

美国国家科学基金会;

关键词：

High-efficiency solar cells; infrared absorption; intermediate band solar cells (IBSC); novel photovoltaic concepts; EFFICIENCY;

D O I：

10.1109/JPHOTOV.2014.2305903

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

ZnTe doped with high concentrations of oxygen has been proposed in previous works as an intermediate band (IB) material for photovoltaic applications. The existence of extra optical transitions related to the presence of an IB has already been demonstrated in this material and it has been possible to measure the absorption coefficient of the transitions from the valence band (VB) to the IB. In this study, we present the first measurement of the absorption coefficient associated with transitions from the IB to the conduction band (CB) in ZnTeO. The samples used are 4-mu m-thick ZnTe layers with or without O in a concentration similar to 10(19) cm(-3), which have been grown on semiinsulating GaAs substrates by molecular beam epitaxy (MBE). The IB-CB absorption coefficient peaks for photon energies similar to 0.4 eV. It is extracted from reflectance and transmittance spectra measured using Fourier transform infrared (FTIR) spectroscopy. Under typical FTIR measurement conditions (low light intensity, broadband spectrum), the absorption coefficient in IB-to-CB transitions reaches 700 cm(-1). This is much weaker than the one observed for VB-IB absorption. This result is consistent with the fact that the IB is expected to be nearly empty of electrons under equilibrium conditions in ZnTe(O).

引用

页码：1091 / 1094

页数：4

共 15 条

[1] Model for intermediate band solar cells incorporating carrier transport and recombination [J].

Lin, Albert S. ;

Wang, Weiming ;

Phillips, Jamie D. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)

[2] Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels [J].

Luque, A ;

Marti, A .

PHYSICAL REVIEW LETTERS, 1997, 78 (26) :5014-5017

[3] A metallic intermediate band high efficiency solar cell [J].

Luque, A ;

Martí, A .

PROGRESS IN PHOTOVOLTAICS, 2001, 9 (02) :73-86

[4] Intermediate bands versus levels in non-radiative recombination [J].

Luque, Antonio ;

Marti, Antonio ;

Antolin, Elisa ;

Tablero, Cesar .

PHYSICA B-CONDENSED MATTER, 2006, 382 (1-2) :320-327

[5] Quantum dot intermediate band solar cell [J].

Marti, A ;

Cuadra, L ;

Luque, A .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :940-943

[6]

Nishio M., 2012, APPL PHYS LETT, V100

[7] Transition-metal-substituted indium thiospinels as novel intermediate-band materials:: Prediction and understanding of their electronic properties [J].

Palacios, P. ;

Aguilera, I. ;

Sanchez, K. ;

Conesa, J. C. ;

Wahnon, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (04)

[8] Photofilling of intermediate bands [J].

Strandberg, Rune ;

Reenaas, Turid Worren .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)

[9] Acceptor and donor ionization energy levels in O-doped ZnTe [J].

Tablero, C. .

COMPUTATIONAL MATERIALS SCIENCE, 2010, 49 (02) :368-371

[10] Analyses of the intermediate energy levels in ZnTe:O alloys [J].

Tablero, C. ;

Marti, A. ;

Luque, A. .

APPLIED PHYSICS LETTERS, 2010, 96 (12)

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