Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

被引：21

作者：

Nguyen, Thanh Nga ^{[1
]}

Nguyen, Van Duy ^{[1
]}

Jung, Sungwook ^{[1
]}

Yi, Junsin ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, Kyungki Do, South Korea

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 19期

关键词：

Metal-induced crystallization (MIC); Nickel; Raman spectrum; Amorphous silicon; Polycrystalline; Residual stress; POLYCRYSTALLINE-SILICON; GLASS; SHAPE; TFTS;

D O I：

10.1016/j.apsusc.2009.05.087

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Raman scattering analysis is used to study the residual stress in metal-induced crystallized amorphous silicon thin film. The influence of the crystallization parameters on thin film properties is investigated as a function of annealing temperature, annealing time, and nickel top-seed-layer thickness. Thin films produced under optimal annealing conditions are measured to have crystallization efficiency of about 98%, which is full crystallization. Residual stress analysis reveals clear stress reduction with prolonged annealing time and Ni capping layer thickness. A very low tensile stress of about 87 MPa is achieved. The relationships between optimal crystallization temperature, crystallization time, and Ni-layer thickness are described. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：8252 / 8256

页数：5

共 28 条

[1] Raman-active phonon line profiles in semiconducting nanowires [J].

Adu, Kofi W. ;

Gutierrez, Humberto R. ;

Eklund, Peter C. .

VIBRATIONAL SPECTROSCOPY, 2006, 42 (01) :165-175

[2] Tensile strain in arsenic heavily doped Si [J].

Borot, G. ;

Rubaldo, L. ;

Clement, L. ;

Pantel, R. ;

Dutartre, D. ;

Kuitunen, K. ;

Slotte, J. ;

Tuomisto, F. ;

Mescot, X. ;

Gri, M. ;

Ghibaudo, G. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (10)

[3] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].

CAMPBELL, IH ;

FAUCHET, PM .

SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741

[4] Polycrystalline silicon thin films obtained by Ni-induced crystallization on glass substrate [J].

Dimova-Malinovska, D ;

Angelov, O ;

Sendova-Vassileva, M ;

Kamenova, M ;

Pivin, JC ;

Pramatarova, L .

VACUUM, 2004, 76 (2-3) :151-154

[5] Network structure and dynamics of hydrogenated amorphous silicon [J].

Drabold, D. A. ;

Abtew, T. A. ;

Inam, F. ;

Pan, Y. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) :2149-2154

[6] RAMAN-SPECTROSCOPY AND POSITRON LIFETIME STUDIES OF STRUCTURAL RELAXATION AND DEFECT EVOLUTION IN AMORPHOUS-SILICON [J].

HIROYAMA, Y ;

SUZUKI, R ;

HIRANO, Y ;

SATO, F ;

MOTOOKA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10) :5515-5519

[7] Memory properties of oxide-nitride-oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glass [J].

Jung, Sungwook ;

Hwang, Sunghyun ;

Yi, J. .

THIN SOLID FILMS, 2008, 517 (01) :362-364

[8] Polycrystalline silicon thin film made by metal-induced crystallization [J].

Kim, DY ;

Gowtham, M ;

Shim, MS ;

Yi, JS .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2004, 7 (4-6) :433-437

[9] Polycrystalline silicon with large disk-shaped grains by Ni-mediated crystallization of doped amorphous silicon [J].

Kim, Kyung Ho ;

Nathan, Arokia ;

Jang, Jin .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) :2341-2344

[10] Effect of amorphous silicon shape on its metal-induced lateral crystallization rate [J].

Kim, Y. -S. ;

Kim, M. -S. ;

Joo, S. -K. .

THIN SOLID FILMS, 2007, 515 (7-8) :3387-3390

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