RADIATION HARDNESS STUDIES OF PIN-DIODE DETECTORS IRRADIATED WITH HEAVY IONS

被引：1

作者：

Krutul, K. ^{[1
,2
]}

Napiorkowski, P. J. ^{[2
]}

Hadynska-Klek, K. ^{[2
]}

Wrzosek-Lipska, K. ^{[2
]}

Komorowska, M. ^{[2
]}

Paluch-Ferszt, M. ^{[2
]}

Szeflinski, Z. ^{[2
]}

Horodek, P. ^{[3
]}

Olejniczak, A. ^{[4
,5
]}

Skuratov, V. A. ^{[5
,6
,7
]}

机构：

[1] Univ Bialystok, Bialystok, Poland

[2] Univ Warsaw, Heavy Ion Lab, Warsaw, Poland

[3] Polish Acad Sci, Inst Nucl Phys, Krakow, Poland

[4] Nicolaus Copernicus Univ, Torun, Poland

[5] Joint Inst Nucl Res, Dubna, Russia

[6] Natl Res Nucl Univ MEPhI, Moscow, Russia

[7] Dubna State Univ, Dubna, Russia

来源：

ACTA PHYSICA POLONICA B PROCEEDINGS SUPPLEMENT | 2020年 / 13卷 / 04期

关键词：

POSITRON-ANNIHILATION;

D O I：

10.5506/APhysPolBSupp.13.861

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Evaluation of the properties of a set of PIN-diode-type semiconductor detectors was performed at the Heavy Ion Laboratory University of Warsaw in Poland with the a particles from Am-241. In order to monitor the radiation damage process in a controlled conditions, the in-beam irradiation experiments were performed using heavy-ion beams: C-12 and Ne-20 at HIL in Warsaw, and Xe-132 at JINR in Dubna. The properties of the irradiated PIN-diode detectors were tested using the positron annihilation spectroscopy. The preliminary results of the experiments are presented.

引用

页码：861 / 867

页数：7

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