Optical and electrical properties of Co-doped epitaxial ZnO films

被引：34
|
作者：
Jin, ZW
Fukumura, T
Hasegawa, K
Yoo, YZ
Ando, K
Sekiguchi, T
Ahmet, P
Chikyow, T
Hasegawa, T
Koinuma, H
Kawasaki, M
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Nano Device Res Grp, Tsukuba, Ibaraki 3050047, Japan
[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[4] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[5] Tokyo Inst Technol, COMET, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[6] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[7] Japan Sci & Technol Corp, CREST, Tokyo 1690072, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷
基金：
日本学术振兴会;
关键词：
molecular beam epitaxy; zinc compounds; magneto-optic materials;
D O I：
10.1016/S0022-0248(01)01976-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Epitaxial ZnO films doped with Co were fabricated by the high throughput combinatorial laser molecular-beam epitaxy method. The solubility limit of Co in ZnO was determined. Transmission and cathodoluminescence spectra were measured to study the electronic structures of Co in Zn1-xCoxO films. Magnetoresistance behavior was measured for a selected sample co-doped with I mol% of Al to investigate s-d exchange interaction between the conducting s electron spins and the d electron spins localized at Co impurity. Huge magneto-optical effects comparable with that of Cd1-xMnxTe were observed on Zn1-xCoxO films. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：548 / 552
页数：5
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