From spin-polarized interfaces to giant magnetoresistance in organic spin valves

被引：19

作者：

Cakir, Deniz ^{[1
,2
,3
]}

Otalvaro, Diana M. ^{[1
,2
]}

Brocks, Geert ^{[1
,2
]}

机构：

[1] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[2] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[3] Okinawa Inst Sci & Technol Grad Univ OIST, Collect Interact Unit, Okinawa 9040495, Japan

来源：

PHYSICAL REVIEW B | 2014年 / 89卷 / 11期

关键词：

MOLECULAR SPINTRONICS; ROOM-TEMPERATURE; SINGLE-MOLECULE; SEMICONDUCTORS; SPINTERFACE;

D O I：

10.1103/PhysRevB.89.115407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent interactions at the metal-molecule interfaces. The magnetoresistance of a Fe vertical bar bilayer-C-70 vertical bar Fe spin valve attains a high value of 70% in the linearresponse regime, but it drops sharply as a function of the applied bias. The current polarization has a value of 80% in linear response and also decreases as a function of bias. Both these trends can be modeled in terms of prominent spin-dependent Fe vertical bar C-70 interface states close to the Fermi level, unfolding the potential of spinterface science to control and optimize spin currents.

引用

页数：5

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