Growth by thermal evaporation of Al doped ZnS elongated micro- and nanostructures and their cathodoluminescence properties

被引:9
作者
Sotillo, B. [1 ]
Fernandez, P. [1 ]
Piqueras, J. [1 ]
机构
[1] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Mat, E-28040 Madrid, Spain
关键词
Semiconductors; Vapor deposition; Scanning Electron Microscopy (SEM); Cathodoluminescence (CL); Nanostructures; PHOTOLUMINESCENCE PROPERTIES; SINGLE-CRYSTALS; LUMINESCENCE; NANOWIRES; NANOPARTICLES; TEMPERATURE; NANOBELTS; DEFECTS;
D O I
10.1016/j.jallcom.2014.03.045
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Wurtzite Al doped ZnS micro- and nanostructures have been grown by an evaporation method. Thermal treatments have been performed during 2 h at a temperature of 1200 degrees C in a N-2 overpressure environment. Columns, rods and needles are the main morphologies observed. Their structural properties have been studied using Scanning Electron Microscopy (SEM), Electron Backscattering Diffraction (EBSD), X-ray Diffraction (XRD) and micro- Raman spectroscopy. Cathodoluminescence (CL) measurements of the structures show an increase of the emission related to the band edge, associated with Al doping. Correlated CL and Remote Electron Beam Induced Current (REBIC) images reveal the presence of charged planar defects and a non-uniform spatial distribution of the defect emission in the structures. (C) 2014 Elsevier B. V. All rights reserved.
引用
收藏
页码:57 / 64
页数:8
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