Dot-array resist patterning using scanning probe microscopy with a hybrid current-voltage control method

被引:0
作者
Ishibashi, M [1 ]
Heike, S [1 ]
Hashizume, T [1 ]
机构
[1] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan
来源
MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS | 2001年
关键词
D O I
10.1109/IMNC.2001.984140
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:162 / 163
页数:2
相关论文
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  • [1] Characteristics of scanning-probe lithography with a current-controlled exposure system
    Ishibashi, M
    Heike, S
    Kajiyama, H
    Wada, Y
    Hashizume, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (13) : 1581 - 1583
  • [2] Ishibashi M., 1999, Journal of Photopolymer Science and Technology, V12, P373, DOI 10.2494/photopolymer.12.373
  • [3] Fabrication of high-resolution and high-aspect-ratio patterns on a stepped substrate by using scanning probe lithography with a multilayer-resist system
    Ishibashi, M
    Sugita, N
    Heike, S
    Kajiyama, H
    Hashizume, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2445 - 2447
  • [4] Combining atomic force microscopic lithography with photolithography
    Ishibashi, M
    Heike, S
    Hashizume, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (12B): : 7060 - 7062