An investigation on the effect of impurity position on the binding energy of quantum box under electric field with pressure and temperature

被引:5
作者
Yilmaz, S. [1 ]
Kirak, M. [2 ]
机构
[1] Bozok Univ, Fac Arts & Sci, Dept Phys, TR-66200 Yozgat, Turkey
[2] Bozok Univ, Fac Educ, TR-66200 Yozgat, Turkey
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2018年 / 32卷 / 13期
关键词
Quantum box; impurity position; pressure; temperature; electric field; HYDROGENIC DONOR IMPURITY; CHEMICAL-VAPOR-DEPOSITION; HYDROSTATIC-PRESSURE; OPTICAL-ABSORPTION; GALLIUM-ARSENIDE; REFRACTIVE-INDEX; EXCITON-STATES; WELL; GAAS; DOTS;
D O I
10.1142/S0217979218501540
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the present study, we have studied theoretically the influences of donor impurity position on the binding energy of a GaAs cubic quantum box structure. The binding energy is calculated as functions of the position of impurity, electric field, temperature and hydrostatic pressure. The variational method is employed to obtain the energy eigenvalues of the structure in the framework of the effective mass approximation. It has been found that the impurity positions with electric field, pressure and temperature have an important effect on the binding energy of structure considered. The results can be used to manufacture semiconductor device application by manipulating the binding energy with the impurity positions, electric field, pressure and temperature.
引用
收藏
页数:13
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共 52 条
[41]   The combined effect of pressure and temperature on the impurity binding energy in a cubic quantum dot using the FEM simulation [J].
Sali, A. ;
Satori, H. .
SUPERLATTICES AND MICROSTRUCTURES, 2014, 69 :38-52
[42]   TEMPERATURE AND PRESSURE DEPENDENCES OF THE DIELECTRIC-CONSTANTS OF SEMICONDUCTORS [J].
SAMARA, GA .
PHYSICAL REVIEW B, 1983, 27 (06) :3494-3505
[43]   Molecular beam epitaxy based growth of cubic GaN quantum dots [J].
Schupp, T. ;
Meisch, T. ;
Neuschl, B. ;
Feneberg, M. ;
Thonke, K. ;
Lischka, K. ;
As, D. J. .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 2011, 8 (05) :1495-1498
[44]   Stark effect in the optical absorption in cubical quantum boxes [J].
Spector, Harold N. ;
Lee, Johnson .
PHYSICA B-CONDENSED MATTER, 2007, 393 (1-2) :94-99
[45]  
Stoneham A. M., 1975, Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors
[46]   Well-width dependence of optical properties of rare-earth ion-doped ZnS0.8Se0.2/undoped ZnS multiple quantum wells -: art. no. 045305 [J].
Tanaka, M ;
Yamada, H ;
Maruyama, T ;
Akimoto, K .
PHYSICAL REVIEW B, 2003, 67 (04)
[47]   STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J].
THURMOND, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1133-1141
[48]   Linear and nonlinear intersubband optical absorption coefficients and refractive index changes in a quantum box with finite confining potential [J].
Unlu, S. ;
Karabulut, I. ;
Safak, H. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 33 (02) :319-324
[49]   Binding energy of the ground and first few excited states of hydrogenic donor impurity in a rectangular GaAs quantum dot in the presence of electric field [J].
Wang, Sheng ;
Kang, Yun ;
Li, Xian-Li .
SUPERLATTICES AND MICROSTRUCTURES, 2014, 76 :221-233
[50]   DEPENDENCE OF DIRECT ENERGY-GAP OF GAAS ON HYDROSTATIC-PRESSURE [J].
WELBER, B ;
CARDONA, M ;
KIM, CK ;
RODRIGUEZ, S .
PHYSICAL REVIEW B, 1975, 12 (12) :5729-5738