Thermally Diffused Point Contacting by Localized Dielectric Breakdown Solar Cells with Boron Etch Back

被引：0

作者：

Ye, Qilin ^{[1
]}

Western, Ned J. ^{[1
]}

Liao, Anqi ^{[1
]}

Bremner, Stephen P. ^{[1
]}

机构：

[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

Dielectric breakdown; locally diffused; boron etch back; point contact; silicon solar cells; RESISTANCE;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

The Point contacting by Localized Dielectric Breakdown method utilises dielectric breakdown above a locally doped region to form ohmic contacts for a solar cell rear surface. A complete cell with thermally diffused local doping regions has been fabricated, giving 17.9% efficiency and 0.74 fill factor. Characterization indicates that the major fill factor loss is due to an unexpected high contact resistance at the rear surface. Measurements on the contact resistivity indicate that the low surface doping concentration (7 x 10(18) cm(-3)) for the local boron diffused region is the main cause for this high contact resistance. This paper demonstrates the fabrication of PLDB cells with an improved boron doping profile with increased surface doping concentrations. The surface doping concentration is then modified using HNA etch-back in order to investigate the impact of surface doping concentration on the contact properties and cell efficiency.

引用

页码：1086 / 1089

页数：4

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