Modeling and simulation of single-electron Multi Tunnel Junction Memory

被引：0

作者：

Le Royer, C. ^{[1
]}

Le Carval, G. ^{[1
]}

Sanquer, M. ^{[1
]}

Fraboulet, D. ^{[1
]}

机构：

[1] CEA GRE, LETI DTS, CEA DRT, F-38054 Grenoble 9, France

来源：

ICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY | 2002年

关键词：

modeling; simulation; nanocrystal memory; double tunnel junction; quantum confinement;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries...) on writing and retention characteristics of the MUM cell, and so we show that this concept could be an alternative for Advanced DRAM Applications (for the 50 nm node predicted around 2011 by ITRS).

引用

页码：205 / 208

页数：4

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