Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution

被引：142
作者：
Uchida, H
Yoshikawa, H
Okada, I
Matsuda, H
Iijima, T
Watanabe, T
Kojima, T
Funakubo, H
机构：
[1] Sophia Univ, Dept Chem, Tokyo 1028554, Japan
[2] AIST, Smart Struct Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[3] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268506, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 12期
关键词：
D O I：
10.1063/1.1507839
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin films of Nd3+-substituted bismuth titanate, (Bi4.00-y,Nd-y)Ti3.00O12 (BNT), Nd3+/V5+-cosubstituted bismuth titanate, (Bi4.00-y,Nd-y)(Ti3.00-xVx)O-12 (BNTV), and La3+-substituted bismuth titanate, (Bi-3.25,La-0.75)Ti3.00O12 (BLT) were fabricated on the (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. These films possessed random-oriented polycrystalline structure. The BNT film had larger remnant polarization (P-r) than the BLT film; P-r and coercive field (E-c) of the BNT film with y=0.50 were 32 muC/cm2 and 126 kV/cm, respectively. Furthermore, V5+ substitution improved the P-r value of the BNT film up to 37 muC/cm2 (BNTV film; y=0.50, x=0.02), while the BNTV film had an E-c value of approximately 119 kV/cm which was similar to that of the BNT film. Ferroelectric properties of the Pb-free polycrystalline BNT and BNTV films are comparable with those of conventional Pb-based ferroelectric films like a lead zirconate titanate. (C) 2002 American Institute of Physics.
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页码：2229 / 2231
页数：3
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