Sorption behavior and mechanism of indium (III) onto amino methylene phosphonic acid resin

被引:0
|
作者
Xiong, CH [1 ]
Lu, BW [1 ]
Wang, YJ [1 ]
机构
[1] Lishui Teachers Coll, Dept Chem, Lishui 323000, Peoples R China
关键词
amino methylene phosphonic acid resin; indium; sorption mechanism;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The sorption behavior of amino methylene phosphonic acid resin (APAR) for In(III) was investigated. Experimental results show that In(III) adsorbed on APAR can be elated with 2 mol.L-1 HCl. The apparent rate constant is k(298) = 1.50 x 10(-5) s(-1). The Sorption behavior of APAR for In (III) obeys the Freundlich isotherm. The themodynamic parameters of sorption, enthalpy change H-Delta, H, free energy change (Delta)G and entropy change S-Delta of sorption (APAR) for In (III) are 24.1 kJ.mol(-1), -35.1 kJ.mol(-1) and 200 J.mol(-1).K-1, respectively. The coordination molar ratio of the functional g-roup of APAR to In(III) is 2:1. The sorption mechanism of APAR for In (III)) was examined by IR Spectrometry.
引用
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页码:47 / 50
页数:4
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