Charge-tunable indium gallium nitride quantum dots

被引:10
|
作者
Zhang, Lei [1 ]
Teng, Chu-Hsiang [2 ]
Ku, Pei-Cheng [2 ]
Deng, Hui [1 ]
机构
[1] Univ Michigan, Dept Phys, 450 Church St, Ann Arbor, MI 48109 USA
[2] Univ Michigan, EECS Dept, 1301 Beal Ave, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
SINGLE-ELECTRON SPIN; PHOTON-EMISSION;
D O I
10.1103/PhysRevB.93.085301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
III-Nitride quantum dots have emerged as a new chip-scale system for quantum information science, which combines electrical and optical interfaces on a semiconductor chip that is compatible with noncryogenic operating temperatures. Yet most work has been limited to optical excitations. To enable single-spin-based quantum optical and quantum information research, we demonstrate here quantized charging in optically active, site-controlled III-nitride quantum dots. Single-electron charging was confirmed by the voltage dependence of the energy, dipole moment, fine structures, and polarization properties of the exciton states in the quantum dots. The fundamental energy structures of the quantum dots were identified, including neutral and charged excitons, fine structures of excitons, and A and B excitons. The results lay the ground for coherent control of single charges in III-nitride quantum dots, opening a door to III-nitride-based spintronics and spin-qubit quantum information processing.
引用
收藏
页数:7
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