Optical characterization of glass materials doped with rare-earth elements

被引：0

作者：

Zavadil, J ^{[1
]}

Lezal, D ^{[1
]}

Procházková, O ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Radio Engn & Elect, CR-18251 Prague 8, Czech Republic

来源：

PHOTONICS, DEVICES,AND SYSTEMS | 2000年 / 4016卷

关键词：

sulphide glasses; rare earth elements; photoluminescence; fibre lasers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sulphide glasses of GeGaS and GeGaAsS systems doped with rare earth ions are promising materials for various photonic applications. Because the solubility of rare earth elements is influenced by the purity of host glass, namely by OH group concentration, the attention has been paid to the preparation of highly pure and homogeneous undoped and rare earth doped glasses. Particularly the systems Ge(0.25)Ga(0.1-x)So(0.65)Pr(x) and Ge(0.25)Ga(0.05-x)As(0.05)So(0.65)Pr(x) with x=500, 1000, 3000, 6000 wt. ppm have been prepared. Synthesised material systems have been characterised by Raman and low-temperature photoluminescence spectroscopies. The optimal Pr concentration has been found to be around 1000 wt.ppm.. The appearance of temperature induced radiative transitions have been observed on GeGaS:Er samples.

引用

页码：478 / 483

页数：6