Growth of silicon nanowires in aqueous solution under atmospheric pressure

被引：11

作者：

Park, Nae-Man ^{[1
]}

Choi, Chel-Jong ^{[2
]}

机构：

[1] ETRI, Components & Mat Lab, Taejon 305700, South Korea

[2] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea

来源：

NANO RESEARCH | 2014年 / 7卷 / 06期

关键词：

Silicon nanowire; solution process; metal catalyst; hexagonal crystalline phase;

D O I：

10.1007/s12274-014-0451-x

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85 degrees C under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.

引用

页码：898 / 902

页数：5

共 15 条

[1] Core-shell silicon nanowire solar cells [J].

Adachi, M. M. ;

Anantram, M. P. ;

Karim, K. S. .

SCIENTIFIC REPORTS, 2013, 3

[2] Synthesis of silicon nanowires with wurtzite crystalline structure by using standard chemical vapor deposition [J].

Fontcuberta i Morral, Anna ;

Arbiol, Jordi ;

Prades, Joan Daniel ;

Cirera, Albert ;

Morante, Joan Ramon .

ADVANCED MATERIALS, 2007, 19 (10) :1347-+

[3] Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon [J].

Gogotsi, Y ;

Baek, C ;

Kirscht, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (10) :936-944

[4] Control of thickness and orientation of solution-grown silicon nanowires [J].

Holmes, JD ;

Johnston, KP ;

Doty, RC ;

Korgel, BA .

SCIENCE, 2000, 287 (5457) :1471-1473

[5] HEXAGONAL (WURTZITE) FORM OF SILICON [J].

JENNINGS, HM ;

RICHMAN, MH .

SCIENCE, 1976, 193 (4259) :1242-1243

[6] Structures of Si and Ge nanowires in the subnanometer range [J].

Kagimura, R ;

Nunes, RW ;

Chacham, H .

PHYSICAL REVIEW LETTERS, 2005, 95 (11)

[7]

Laocharoensuk R, 2013, NAT NANOTECHNOL, V8, P660, DOI [10.1038/nnano.2013.149, 10.1038/NNANO.2013.149]

[8] Imaging and Analysis of Axial Heterostructured Silicon Nanowires [J].

Li, F. ;

Nellist, P. D. ;

Lang, C. ;

Cockayne, D. J. H. .

ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2009 (EMAG 2009), 2010, 241

[9] Nanowire electronic and optoelectronic devices [J].

Li, Yat ;

Qian, Fang ;

Xiang, Jie ;

Lieber, Charles M. .

MATERIALS TODAY, 2006, 9 (10) :18-27

[10] Functionalization of silicon nanowire surfaces with metal-organic frameworks [J].

Liu, Nian ;

Yao, Yan ;

Cha, Judy J. ;

McDowell, Matthew T. ;

Han, Yu ;

Cui, Yi .

NANO RESEARCH, 2012, 5 (02) :109-116

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