SET to RESET programming in phase change memories

被引：35
作者：
Karpov, Ilya V.
Kostylev, Sergey A.
机构：
[1] Intel Corp, Santa Clara, CA 95052 USA
[2] Ovonyx Technol Inc, Rochester, MI 48306 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 10期
关键词：
chalcogenide; Ge2Sb2Te5 (GST); ovonic unified memory (OUM); phase change memory (PCM);
D O I：
10.1109/LED.2006.882527
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental data on details of SET (crystalline) to RESET (amorphous) transition are presented for Ge2Sb2Te5 (GST) nonvolatile memory cell. It is shown that the main source of heat for a SET to RESET transition is the GST bulk and interface regions instead of the contacting electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. Increasing bottom contact resistivity offers a scaling path for RESET current with no electrical penalties.
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页码：808 / 810
页数：3
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