A Wideband Unity-Gain Buffer in 0.13-μm CMOS

被引：0

作者：

Keikhosravy, Kamyar ^{[1
]}

Kamalinejad, Pouya ^{[1
]}

Mirabbasi, Shahriar ^{[1
]}

Leung, Victor ^{[1
]}

机构：

[1] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V5Z 1M9, Canada

来源：

2013 IEEE 20TH INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS (ICECS) | 2013年

关键词：

Analog buffer; voltage follower; wideband buffer; CMOS; ERROR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an ultra wideband analog voltage-mode buffer is presented which can drive a load impedance of 50 Omega. The presented feedback-based buffer uses a compound amplifier which is a parallel combination of a high-DC gain operational amplifier and a operation transconductance amplifier to achieve a high unity gain bandwidth. A proof-of-concept prototype is designed and fabricated in a 0.13 mu m CMOS process. The simulation and measurement results of the proposed buffer are in good agreement. The prototype buffer circuit consumes 7.34 mW from a 1.3-V supply, while buffering a 2 GHz sinusoidal input signal with a 0.4 V peak-to-peak (V-pp) amplitude and driving an AC-coupled 50-Omega load.

引用

页码：9 / 12

页数：4

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