One-step synthesis of uniform silver nanoparticles capped by saturated decanoate: direct spray printing ink to form metallic silver films

被引:76
|
作者
Dong, Teng-Yuan [1 ]
Chen, Wei-Ting [1 ]
Wang, Ching-Wen [1 ]
Chen, Chiao-Pei [1 ]
Chen, Chen-Ni [1 ]
Lin, Ming-Cheng [1 ]
Song, Jenn-Ming [2 ]
Chen, In-Gann [3 ]
Kao, Tzu-Hsuan [3 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Chem, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan
[2] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Hualien, Taiwan
[3] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
关键词
CHEMICAL-VAPOR-DEPOSITION; SELF-ASSEMBLED MONOLAYER; THERMAL-DESORPTION SPECTROSCOPY; GOLD NANOPARTICLES; TEMPERATURE; AU(111); COPPER; SIZE; AG; EXCHANGE;
D O I
10.1039/b900691e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The one-step synthesis and spectroscopic characterizations of size-controlled silver nanoparticles are described. The transmission electron microscopy (TEM), nuclear magnetic resonance (NMR), Fourier transform infrared spectroscopy (FT-IR), thermal gravimetric-mass analysis (TGA-MS) and X-ray photoelectron spectroscopy (XPS) techniques were used to characterize the decanoate-protected silver nanoparticles. TEM analysis showed that spherical nanoclusters of 7.52 +/- 0.57 nm were produced. Furthermore, the particle sizes are uniform with a narrow size distribution. For all samples, Ag 3d(5/2) and 3d(3/2) components appeared at 368.5 and 374.5 eV, respectively, in the XPS spectrum; these values compare very well with the typical values of carboxylate-protected Ag nanoparticles. A thermal analysis mass spectrometer was used to analyze the desorption behavior of decanoate-protected nanoparticles. From the desorption maximum temperatures of 181 and 263 degrees C, activation energies of 27.2 and 32.2 kcal mol(-1) for the desorption processes in the Ag MPCs were obtained, assuming a first-order reaction and using a pre-exponential factor of 1 x 10(13) s(-1). A specific resistivity of 6.097 mu Omega cm for the silver metal film (0.7 mu m) on a Si wafer can be produced simply by thermal annealing of an Ag monolayer-protected clusters film under an atmosphere of 90% N-2-10% H-2 at 300 degrees C for 1 h.
引用
收藏
页码:6269 / 6275
页数:7
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