Simultaneous effects of pressure and laser field on donors in GaAs/Ga1-xAlxAs quantum wells

被引：57

作者：

Eseanu, N. ^{[1
]}

Niculescu, E. C. ^{[1
]}

Burileanu, L. M. ^{[1
]}

机构：

[1] Univ Politehn Bucuresti, Dept Phys, RO-060042 Bucharest, Romania

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 08期

关键词：

Quantum well; Hydrogenic impurity; Binding energy; Hydrostatic pressure; Laser field; HYDROSTATIC-PRESSURE; BINDING-ENERGIES; OPTICAL-PROPERTIES; ELECTRIC-FIELD; SEMICONDUCTORS; TEMPERATURE; IMPURITIES; DEPENDENCE; STATES; GAAS;

D O I：

10.1016/j.physe.2009.04.001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Within the framework of effective-mass approximation, using a variational method, the combined effect of the hydrostatic pressure and high-frequency laser field on the binding energy of a hydrogenic impurity in square and parabolic GaAs/Ga1-xAlxAs quantum wells is investigated. Our numerical results show that the effects of the laser field on the electronic properties are more pronounced than those of the pressure ones, and the changes in the binding energy are dependent on the shape of the confinement potential. The variations of the impurity binding energy in intense laser fields can be tuned by the hydrostatic pressure. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1386 / 1392

页数：7

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