Simultaneous effects of pressure and laser field on donors in GaAs/Ga1-xAlxAs quantum wells

被引：57

作者：

Eseanu, N. ^{[1
]}

Niculescu, E. C. ^{[1
]}

Burileanu, L. M. ^{[1
]}

机构：

[1] Univ Politehn Bucuresti, Dept Phys, RO-060042 Bucharest, Romania

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 08期

关键词：

Quantum well; Hydrogenic impurity; Binding energy; Hydrostatic pressure; Laser field; HYDROSTATIC-PRESSURE; BINDING-ENERGIES; OPTICAL-PROPERTIES; ELECTRIC-FIELD; SEMICONDUCTORS; TEMPERATURE; IMPURITIES; DEPENDENCE; STATES; GAAS;

D O I：

10.1016/j.physe.2009.04.001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Within the framework of effective-mass approximation, using a variational method, the combined effect of the hydrostatic pressure and high-frequency laser field on the binding energy of a hydrogenic impurity in square and parabolic GaAs/Ga1-xAlxAs quantum wells is investigated. Our numerical results show that the effects of the laser field on the electronic properties are more pronounced than those of the pressure ones, and the changes in the binding energy are dependent on the shape of the confinement potential. The variations of the impurity binding energy in intense laser fields can be tuned by the hydrostatic pressure. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1386 / 1392

页数：7

共 39 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] USE OF ULTRASONIC MEASUREMENTS UNDER MODEST PRESSURE TO ESTIMATE COMPRESSION AT HIGH PRESSURE [J].

ANDERSON, OL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (03) :547-&

[3] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[4] Pressure effect on the binding energies of donors in GaAs/AlxGa1-xAs heterojunctions [J].

Ban, SL ;

Liang, XX .

JOURNAL OF LUMINESCENCE, 2001, 94 (94-95) :417-420

[5] Polarizabilities of shallow donors in inverse V-shaped quantum wells under laser field [J].

Burileanu, L. M. ;

Niculescu, E. C. ;

Eseanu, N. ;

Radu, A. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (05) :856-860

[6]

Debernardi A, 2001, PHYS STATUS SOLIDI B, V223, P213, DOI 10.1002/1521-3951(200101)223:1<213::AID-PSSB213>3.0.CO

[7]

2-I

[8] POSITRONIUM DECAY IN INTENSE HIGH-FREQUENCY LASER FIELDS [J].

EHLOTZKY, F .

PHYSICS LETTERS A, 1988, 126 (8-9) :524-527

[9] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].

EHRENREICH, H .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&

[10] EFFECT OF THE GAMMA-CHI CROSSOVER ON THE BINDING-ENERGIES OF CONFINED DONORS IN SINGLE GAAS/ALXGA1-XAS QUANTUM-WELL MICROSTRUCTURES [J].

ELABSY, AM .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (46) :10025-10030

← 1 2 3 4 →