Gas sensing properties of SnO2 thin films grown by MBE

被引：17
作者：
Kroneld, M.
Novikov, S.
Saukko, S.
Kuivalainen, P.
Kostamo, P.
Lantto, V.
机构：
[1] Helsinki Univ Technol, Dept Elect & Commun Engn, Electron Phys Lab, FIN-02150 Espoo, Finland
[2] Univ Oulu, Microelect Lab, FIN-90014 Oulu, Finland
[3] Helsinki Univ Technol, Dept Elect & Commun Engn, Optoelect Lab, FIN-02150 Espoo, Finland
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2006年 / 118卷 / 1-2期
基金：
芬兰科学院;
关键词：
tin dioxide; molecular beam epitaxy; TIN OXIDE-FILMS; DEPOSITION; SAPPHIRE;
D O I：
10.1016/j.snb.2006.04.006
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
A comparative study of the gas sensing properties between mono- and poly-crystalline tin dioxide thin films has been carried out. SnO2 films of thickness range 30-100nm were deposited on r-axis sapphire substrate in temperature range 260-550 degrees C using the molecular beam epitaxy (MBE) technique. The crystalline structure of the resulting films was examined by using in situ high energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical properties of the films were characterized by using a Hall effect measurement system. Sensitivity towards different gases was tested and a comparison between mono- and poly-crystalline films is presented. Monocrystalline films were found to exhibit greater potential for continuous gas detection. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：110 / 114
页数：5
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