Effect of patterning on the saturation magnetization in MgO based nanopillars

被引：15

作者：

Cornelissen, S. ^{[1
]}

Bianchini, L. ^{[2
]}

Helmer, A. ^{[2
]}

Devolder, T. ^{[2
]}

Kim, Joo-Von ^{[2
]}

de Beeck, M. Op ^{[1
]}

Van Roy, W. ^{[1
]}

Lagae, L. ^{[1
]}

Chappert, C. ^{[2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Univ Paris 11, CNRS, IEF, UMR 8622, F-91405 Orsay, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 07期

关键词：

SPIN-POLARIZED CURRENT; DRIVEN;

D O I：

10.1063/1.3063080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effect of nanopillar patterning on the saturation magnetization of the CoFeB free layer in MgO magnetic tunnel junctions. Before patterning, the free layer magnetization is measured by ferromagnetic resonance and is found to be close to the bulk value, with no detectable interface anisotropy. After patterning, the shape anisotropy and the frequency of the main spin wave mode indicate that the free layer magnetization is substantially reduced. Current dependent measurements indicate that this is not due to Joule heating. Size dependent measurements indicate that the magnetization reduction most likely arises from process damage during the etching step. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3063080]

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页数：3

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