Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors

被引：29

作者：

Okita, Hideyuki ^{[1
]}

Hikita, Masahiro ^{[1
]}

Nishio, Akihiko ^{[1
]}

Sato, Takahiro ^{[1
]}

Matsunaga, Keiichi ^{[1
]}

Matsuo, Hisayoshi ^{[1
]}

Tsuda, Michinobu ^{[1
]}

Mannoh, Masaya ^{[1
]}

Kaneko, Saichiro ^{[1
]}

Kuroda, Masayuki ^{[1
]}

Yanagihara, Manabu ^{[1
]}

Ikoshi, Ayanori ^{[1
]}

Morita, Tatsuo ^{[2
]}

Tanaka, Kenichiro ^{[2
]}

Uemoto, Yasuhiro ^{[1
]}

机构：

[1] Panasonic Corp, Panasonic Semicond Solut Co Ltd, Semicond Business Unit, Nagaokakyo 6170833, Japan

[2] Panasonic Corp, Automot & Ind Co, Nagaokakyo 6170833, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期

关键词：

Gate injection transistor (GIT); normally off; recess gate; regrowth; threshold voltage (V-th);

D O I：

10.1109/TED.2017.2653847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new gate recess process technology has been successfully implemented in normally off GaN-based gate injection transistors, in order to improve the process stability. In this process, unlike the conventionalgate recess process, the initial AlGaN barrier layer in the gate region is fully removed, and then, AlGaN is reproduced by epitaxial regrowth for the first time. By using this technology, the standarddeviationof thresholdvoltage (V (th)) improvesdrastically from 229 to 63 mV in 6-in substrate. Furthermore, V th values were easily controlled from 1.0 to 2.3 V by changing the regrown AlGaN thickness, without changing other dc characteristics and their distributions.

引用

页码：1026 / 1031

页数：6

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